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| NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.032 (max) NUltra High-Speed Switching NSOP-8 Package GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP131A0232SR is an N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Low on-state resistance : Rds(on)=0.032 (Vgs=4.5V) : Rds(on)=0.045 (Vgs=2.5V) : Rds(on)=0.08 (Vgs=1.5V) Ultra high-speed switching Operational Voltage : 1.5V High density mounting : SOP-8 11 Ta=25C PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 20 8 8 25 8 2.5 150 -55~150 UNITS V V A A A W C C Note: When implemented on a glass epoxy PCB 719 DC Characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage Note: Effective during pulse test. Ta=25C SYMBOL Idss Igss Vgs(off) Rds(on) CONDITIONS Vds=20V, Vgs=0V Vgs=8V, Vds=0V Id=1mA, Vds=10V Id=4A, Vgs=4.5V Id=4A, Vgs=2.5V Id=4A, Vgs=1.5V Id=4A, Vds=10V If=8A, Vgs=0V MIN TYP MAX 10 10 0.5 0.025 0.035 0.055 18 0.85 1.1 0.032 0.045 0.08 UNITS A A V S V Yfs Vf Dynamic Characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=10V, Vgs=0V f=1MHz MIN TYP 1200 550 180 MAX Ta=25C UNITS pF pF pF Switching Characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=5V, Id=4A Vdd=10V CONDITIONS MIN TYP 15 15 80 10 MAX Ta=25C UNITS ns ns ns ns 11 Thermal Characteristics PARAMETER Thermal Resistance (channel-ambience) SYMBOL Rth (ch-a) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 50 MAX UNITS C/W 720 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Pulse Test, Ta=25C DRAIN CURRENT vs. GATE-SOURCE VOLTAGE Pulse Test, Vds=10V Drain Current:Id (A) Drain Current:Id (A) Drain-Source Voltage:Vds (V) Gate-Source Voltage:Vgs (V) DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE Pulse Test, Ta=25C DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulse Test, Ta=25C Drain-Source On-State Resistance :Rds (on) () Drain-Source On-State Resistance :Rds (on) () Gate-Source Voltage:Vgs (V) Drain Current:Id (A) DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE Pulse Test GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE Vds=10V, Id=1mA 11 Ambient Temp.:Topr (C) Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V) Drain-Source On-State Resistance :Rds (on) () Ambient Temp.:Topr (C) 721 CAPACITANCE vs. DRAIN-SOURCE VOLTAGE Vgs=0V, f=1MHz SWITCHING TIME vs. DRAIN CURRENT Vgs=5V, Vdd 10V, PW=10sec. duty1% Switching Time:t (ns) Capacitance:C (pF) Drain-Source Voltage:Vds (V) Drain Current:Id (A) GATE-SOURCE VOLTAGE vs. GATE CHARGE Vds=10V, Id=8A REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE Pulse Test Gate-Source Voltage:Vgs (V) Reverse Drain Current:Id (A) Gate Charge:Qg (nc) Source-Drain Voltage:Vsd (V) STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH 11 Rth (ch-a)=50C/W, (Implemented on a glass epoxy PCB) Pulse Width:PW (sec) 722 |
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